Abstract
Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 Mμ to 700.32±300.83 Mμ and low-resistance state (LRS) from 0.03±0.02 Mμ to 0.09±0.03 Mμ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.