Source-Side Injection Programmed P-channel Self-Aligned-Nitride OTP Cell for 90nm Logic Nonvolatile Memory Applications

Conference paper

H. OuYang, Y. J. Chen, C. E. Huang and C. J. Lin

International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials, p.434

2009

Abstract

P-channel;Self-Aligned-Nitride;OTP

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Title: Source-Side Injection Programmed P-channel Self-Aligned-Nitride OTP Cell for 90nm Logic Nonvolatile Memory Applications
Creators - without role: H. OuYang - National Tsing Hua University
Y. J. Chen
C. E. Huang
C. J. Lin - National Tsing Hua University
Identifiers: 9957776360906774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: International Conference on Solid State Devices and Materials International Conference on Solid State Devices and Materials, p.434