Logo image
Back
Stochastic filament formation on the cycling endurance of backfilled contact resistive random access memory cells
Conference paper

Stochastic filament formation on the cycling endurance of backfilled contact resistive random access memory cells

Yun-Feng Kao, Chrong Jung Lin and Ya-Chin King
2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, 8804707
04/2019
DOI: https://doi.org/10.1109/VLSI-TSA.2019.8804707

Abstract

Hardware and Architecture Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Repeated and fast switching between on/off state without read window degradation is key for the development of resistive random access memory (RRAM) to meet reliable nonvolatile storage demands. In cycling study of the cell, we first established an incremental step pulse programing (ISPP) algorithm for 1T-1R backfilled contact resistive random access memory (BCRRAM) array. Experimental data reveals a strong correlation between reset time and the types of conductive filament (CF) formed. A training methodology is proposed to reduce the chance of the stochastic CF growth inside BCRRAM to maintain efficient reset operations and extend the endurance capability.

Metrics

1 Record Views

Details

Logo image