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Strain relaxation and defect reduction in InxGa1-xAs by lateral oxidation of an AlGaA channel
Conference paper

Strain relaxation and defect reduction in InxGa1-xAs by lateral oxidation of an AlGaA channel

K. L. Chang, J. H. Epple, G. W. Pickrell, H. C. Lin, K. Y. Cheng and K. C. Hsieh
2000 Electronic Materials Conference
2000

Abstract

InxGa1-xAs;lateral oxidation;AlGaA

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