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Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films
Conference paper

Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films

H.W. Jang, S.H. Baek, D. Ortiz, C.M. Folkman, R.R. Das, Y.H. Chu, J.X. Zhang, V. Vaithyanathan, S. Choudhury, Y.B. Chen, …
IEEE International Symposium on Applications of Ferroelectrics, Vol.3, 4693773
2008
DOI: https://doi.org/10.1109/ISAF.2008.4693773

Abstract

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
We report the strain dependence of remanent polarization and coercive field of epitaxial (001) p BiFeO 3 films. Our measurements reveal that the large spontanoues polarization of BiFeO 3 is indeed intrinsic, the remanent polarization of (001) p BiFeO 3 thin films has a strong strain dependence, even stronger than (001) PbTiO 3 films, and the coercive field of BiFeO 3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO 3 membranes allows us to achieve a fatigue-free switching behavior to 10 10 cycles. This experimental result strongly suggests that epitaxial (001) p BiFeO 3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.

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