Strained AlGaInP multiple quantum wire lasers grown by gas source molecular beam epitaxy

P. J. Pearah; A. C. Chen; A. M. Moy; E. M. Stellini; K. C. Hsieh; K. Y. Cheng

doi:10.1109/LEOSST.1993.696832

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Conference paper

Strained AlGaInP multiple quantum wire lasers grown by gas source molecular beam epitaxy

P. J. Pearah, A. C. Chen, A. M. Moy, E. M. Stellini, K. C. Hsieh and K. Y. Cheng

IEEE Xplore Digital Library LEOS Summer Topical Meeting on Visible Semiconductor Lasers, p.29

1993

DOI: https://doi.org/10.1109/LEOSST.1993.696832

Abstract

Wire;Gas lasers;Molecular beam epitaxial growth;Quantum well devices;Substrates;Diode lasers;Semiconductor lasers;Threshold current;Polarization;Epitaxial growth

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Title: Strained AlGaInP multiple quantum wire lasers grown by gas source molecular beam epitaxy
Creators - without role: P. J. Pearah - University of Illinois Urbana-Champaign
A. C. Chen - University of Illinois Urbana-Champaign
A. M. Moy - University of Illinois Urbana-Champaign
E. M. Stellini - University of Illinois Urbana-Champaign
K. C. Hsieh - University of Illinois Urbana-Champaign
K. Y. Cheng - University of Illinois Urbana-Champaign
Identifiers: 780312848; 9957769647906774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: IEEE Xplore Digital Library LEOS Summer Topical Meeting on Visible Semiconductor Lasers, p.29

Strained AlGaInP multiple quantum wire lasers grown by gas source molecular beam epitaxy

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