Stress Gradient Influence of Tensile Contact Etch Stop Layer on Strained NMOSFETs

Conference paper

Y. T. Kuo, D.Y. Li, C. C. Lee and C. H. Liu

2015 International Electron Devices and Materials Symposium (IEDMS) 2015 International Electron Devices and Materials Symposium (IEDMS)

2015

Metrics

1 Record Views

Title: Stress Gradient Influence of Tensile Contact Etch Stop Layer on Strained NMOSFETs
Creators - without role: Y. T. Kuo
D.Y. Li
C. C. Lee - 國立清華大學工學院動力機械工程學系
C. H. Liu
Identifiers: 9957775500306774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 2015 International Electron Devices and Materials Symposium (IEDMS) 2015 International Electron Devices and Materials Symposium (IEDMS)