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Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory
Conference paper

Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory

Sk Ziaur Rahaman, Yu-Chen Hsin, Shan-Yi Yang, Yao-Jen Chang, Hsin-Han Lee, Kuan-Ming Chen, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Cheng-Yi Shih, …
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
2023
DOI: https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134109

Abstract

Artificial Intelligence Computer Networks and Communications Computer Science Applications Hardware and Architecture Information Systems Electrical and Electronic Engineering
In this study, we optimized the SOT-MRAM structure and extensively investigated the corresponding SOT switching properties. A wafer-level statistical study of the SOT switching properties, such as the ratio of tunnel magnetoresistance (TMR), SOT switching voltage, and parallel/antiparallel state resistances (RP/RAP), was investigated in detail. The pulse width, temperature, and program/erase cycle-dependent SOT switching reliability were investigated. Finally, the optimized SOT-MRAM cell shows a high TMR of > 165%, a fast write speed of 5 ns, a long endurance of > 108 cycles, and a high thermal stability factor of Δ59, which meets the retention criteria of > 10 years.

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