Abstract
We used an approach combining Inductively Coupled Plasma (ICP) etching process and high resolution electron beam lithography and successfully fabricate high aspect ratio zone plate for hard-x-ray applications. The electron beam lithography defines the pattern with outmost zone dimension smaller than 100nm while the consequently ICP produced high aspect ratio structures. Both chacteristics, high resolution patterning and high aspect ratio are required to produce zone plate devices for multi-keV x-rays. We demonstrated that a zone plate with a 60nm outmost zone and a thickness of 500nm is achievable by this approach. © 2007 American Institute of Physics.