Abstract
We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p/n junction, which could make the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion-implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct features on current-voltage (I-V) curves has been observed.