Sub-10V 4-bit/cell nanowire SONOS NAND Flash memory using Schottky barrier Fowler-Nordheim mode electron programming and hole erasing

Conference paper

W. Chang, C.-H. Shih, Y.-X. Luo, W.-F. Wu and C. Lien

2012

Abstract

Sub-10V 4-bit/cell;nanowire;SONOS NAND Flash memory;Schottky barrier Fowler-Nordheim mode;electron programming;hole erasing

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Title: Sub-10V 4-bit/cell nanowire SONOS NAND Flash memory using Schottky barrier Fowler-Nordheim mode electron programming and hole erasing
Creators - without role: W. Chang
C.-H. Shih
Y.-X. Luo
W.-F. Wu - 國立清華大學原子科學院工程與系統科學系
C. Lien
Identifiers: 9957769207406774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper