Sub-3 DB Insertion Loss Broadband Acoustic Delay Lines and High Fom Resonators in LiNbO3/SiO2/Si Functional Substrate

Chun-Chen Yeh; Chia-Hsien Tsai; Guan-Lin Wu; Tzu-Hsuan Hsu; Ming-Huang Li

doi:10.1109/MEMS49605.2023.10052343

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Conference paper

Sub-3 DB Insertion Loss Broadband Acoustic Delay Lines and High Fom Resonators in LiNbO3/SiO2/Si Functional Substrate

Chun-Chen Yeh, Chia-Hsien Tsai, Guan-Lin Wu, Tzu-Hsuan Hsu and Ming-Huang Li

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Vol.2023-January, pp.1194-1197

2023

DOI: https://doi.org/10.1109/MEMS49605.2023.10052343

Appears in keyword about Physics

Abstract

acoustic delay lines

and piezoelectric transducers

lithium niobite

MEMS

SAW resonators

Electronic

Optical and Magnetic Materials

Condensed Matter Physics

Mechanical Engineering

Electrical and Electronic Engineering

This work demonstrates high-performance shear-horizontal surface acoustic wave (SH-SAW) delay lines at 910 MHz with low insertion loss (IL) of 2.6 dB and wide fractional bandwidth (FBW) of 8.8% in thin film LiNbO3/SiO2/Si functional substrate. The SH-SAW acoustic delay lines (ADLs) based on X-cut LiNbO3 thin film and gold (Au) electrodes show a group velocity (Vg) of 4,300 m/s and a propagation loss of 10.1 dB/mm, which yields an effective quality factor (QPL) of 675. To validate the QPL from the delay line measurement, a 969 MHz one-port SH-SAW resonator at a similar operation frequency was designed on the same chip and presents high effective electromechanical coupling factor (keff2) up to 38.5% and maximum Bode-Q (Qmax) of 848, resulting in a high figure-of-merit (FoM) of 326. The low-loss behavior of SH-SAW devices illustrates the potential of LiNbO3/SiO2/Si functional substrates for RF signal processing and cross-domain applications.

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Title: Sub-3 DB Insertion Loss Broadband Acoustic Delay Lines and High Fom Resonators in LiNbO3/SiO2/Si Functional Substrate
Translated title: Sub-3 DB Insertion Loss Broadband Acoustic Delay Lines and High Fom Resonators in LiNbO3/SiO2/Si Functional Substrate
Creators - without role: Chun-Chen Yeh - National Tsing Hua University
Chia-Hsien Tsai - National Tsing Hua University
Guan-Lin Wu - National Tsing Hua University
Tzu-Hsuan Hsu - National Tsing Hua University
Ming-Huang Li - National Tsing Hua University , Department of Power Mechanical Engineering
Publication Details: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Vol.2023-January, pp.1194-1197
Identifiers: 9781665493086; 9957775824306774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper

Sub-3 DB Insertion Loss Broadband Acoustic Delay Lines and High Fom Resonators in LiNbO3/SiO2/Si Functional Substrate

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