Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation

Ya-Chin King; Charles Kuo; Tsu-Jae King; Chenming Hu

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Conference paper

Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation

Ya-Chin King, Charles Kuo, Tsu-Jae King and Chenming Hu

Technical Digest - International Electron Devices Meeting, pp.585-588

1998

Abstract

A novel and simple method of growing oxides of multiple thicknesses using oxygen implant in sub-5 nm gate oxide technologies is presented. Results show that multiple thicknesses on the same wafer can be achieved with good interface and bulk properties of the oxide. Oxygen implant produces oxides with better Q _BD characteristics than the nitrogen-implanted oxides.

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Title: Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation
Creators - without role: Ya-Chin King - University of California, Berkeley
Charles Kuo - University of California, Berkeley
Tsu-Jae King - University of California, Berkeley
Chenming Hu - University of California, Berkeley
Grant note: IEEE
Identifiers: 9957773685806774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Technical Digest - International Electron Devices Meeting, pp.585-588

Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation

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