Abstract
Compared with the Ni/HfO X device, the Ni/AlO X / HfO X unipolar device exhibits a higher R HIGH and the robust endurance of 10k cycles without any soft-errors. A possible mechanism with filament model is proposed to describe these results. The high operation speed of 40 ns, low operation current possibly down to 10 μA, and stable nonvolatile characteristic at 85 °C in the Ni/AlO X /HfO X device are demonstrated to realize the device to be the next generation nonvolatile memory. © 2012 IEEE.