THz GaAsSb/InP Type-II Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy

Conference paper

THz GaAsSb/InP Type-II Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy

K. Y. Cheng, Bing-Ruey Wu, William Snodgrass and Milton Feng

MBE Taiwan Conference

2006

Abstract

Molecular Beam Epitaxy;Gas-Source;Type-II;Heterojunction;Bipolar;Transistors

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Title: THz GaAsSb/InP Type-II Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy
Creators - without role: K. Y. Cheng
Bing-Ruey Wu
William Snodgrass
Milton Feng
Publication Details: MBE Taiwan Conference
Identifiers: 9957776954806774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper