Abstract
In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.