THz emission characteristics of dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

Tze-An Liu; Masahiko Tani; Gong-Ru Lin; Ci-Ling Pan

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THz emission characteristics of dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

Tze-An Liu, Masahiko Tani, Gong-Ru Lin and Ci-Ling Pan

Springer Series in Chemical Physics, Vol.71, pp.277-279

2003

Appears in keyword about Physics

Abstract

We compare the performance of THz dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs (multi-GaAs:As <sup>+</sup> ) and Semi-insulating (S. I.) GaAs. High damage threshold biasing (> 60 kV/cm) and large saturating optical pumping power (> 30 mW) for multi-GaAs:As <sup>+</sup> based devices are reported.

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Title: THz emission characteristics of dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs
Creators - without role: Tze-An Liu - Inst. of Electro-Optical Engineering , National Chiao Tung University
Masahiko Tani - Kansai Adv. Res. Ctr. , Communications Res. Lab. , Min. of Posts and Telecommunications
Gong-Ru Lin - Grad. Inst. Opto-Electro. Technol. , Natl. Taipei Univ. of Technology
Ci-Ling Pan - Inst. of Electro-Optical Engineering , National Chiao Tung University
Publication Details: Springer Series in Chemical Physics, Vol.71, pp.277-279
Identifiers: 9957774526406774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper

THz emission characteristics of dipole antennas fabricated on Multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

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