THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Tze-An Liu; Masahiko Tani; Gong-Ru Lin; Ci-Ling Pan

doi:10.1117/12.455413

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Conference paper

THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Tze-An Liu, Masahiko Tani, Gong-Ru Lin and Ci-Ling Pan

Proceedings of SPIE - The International Society for Optical Engineering, Vol.4490, pp.96-103

2001

DOI: https://doi.org/10.1117/12.455413

Abstract

Arsenic-ion-implanted GaAs

Dipole antenna

Large-aperture photoconductive antenna

THz radiation

Significant difference in temporal and spectral characteristics of THz radiation emitted by large- (1mm) and small- (5μm) aperture dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped semi-insulating GaAs is reported and attributed to the geometry of the antenna.

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Title: THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs
Creators - without role: Tze-An Liu - National Yang Ming Chiao Tung University
Masahiko Tani - Inst. of Electro-Optic Engineering , National Chiao Tung University
Gong-Ru Lin - Inst. of Electro-Optic Engineering , National Chiao Tung University
Ci-Ling Pan - Inst. of Electro-Optic Engineering , National Chiao Tung University
Publication Details: Proceedings of SPIE - The International Society for Optical Engineering, Vol.4490, pp.96-103
Grant note: SPIE
Identifiers: 9957766853106774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper

THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

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