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TMD FinFET with 4 nm thin body and back gate control for future low power technology
Conference paper

TMD FinFET with 4 nm thin body and back gate control for future low power technology

Min-Cheng Chen, Kai-Shin Li, Lain-Jong Li, Ang-Yu Lu, Ming-Yang Li, Yung-Huang Chang, Chang-Hsien Lin, Yi-Ju Chen, Yun-Fang Hou, Chun-Chi Chen, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2016-February, pp.32.2.1-32.2.4
02/2015
DOI: https://doi.org/10.1109/IEDM.2015.7409813
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET.

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