Abstract
The microstructures and phases of Ta-N films deposited with various N 2 /Ar gas mixtures were studied by RBS, TEM, XRD, and sheet resistance measurement. The resultant data was analyzed in detail.
- Title
- Ta and Ta-N diffusion barriers sputtered with various N2/Ar ratios for Cu metallization
- Creators - without role
- J.H. Wang - National Tsing Hua UniversityL.J. Chen - National Tsing Hua UniversityZ.C. Lu - United Microelectronics (Taiwan)C.S. Hsiung - United Microelectronics (Taiwan)W.Y. Hsieh - United Microelectronics (Taiwan)T.R. Yew - United Microelectronics (Taiwan)
- Identifiers
- 9957776985306774
- Academic Unit
- Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University; National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
- Publication Details
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol.20(4), pp.1522-1526