Abstract
The lateral field effect rectifier (L-FER) on AlGaN/GaN heterostructure on silicon substrate compatible with the HEMT process has been characterized for high temperature operation (up to 250 °C). The proposed rectifier takes advantage of adjusting the forward-on voltage to a slightly positive value by fluorine plasma treatment. The temperature dependences of the forward-on voltage and the on-resistance of the rectifiers with different drift lengths were measured. The knee voltage of the rectifier exhibits very little temperature dependence as the temperature raised to 250 °C. These results indicate that L-FER is promising for operation over a wide range of ambient temperatures. © 2008 IEEE.