Temperature dependence of hole mobility in carbon-doped GaAs grown by LP-MOCVD and MOMBE

Conference paper

Temperature dependence of hole mobility in carbon-doped GaAs grown by LP-MOCVD and MOMBE

S. A. Stockman, J. N. Baillargeon, G. E. Fernandez-Hofler, K. C. Hsieh, K. Y. Cheng and G. E. Stillman

1991 Electronic Materials Conference

1991

Abstract

mobility;carbon-doped;GaAs;LP-MOCVD;MOMBE

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Title: Temperature dependence of hole mobility in carbon-doped GaAs grown by LP-MOCVD and MOMBE
Creators - without role: S. A. Stockman
J. N. Baillargeon
G. E. Fernandez-Hofler
K. C. Hsieh
K. Y. Cheng
G. E. Stillman
Identifiers: 9957774517206774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 1991 Electronic Materials Conference