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Temperature effect on operations and characteristics of p-channel FinFET dielectric RRAM
Conference paper

Temperature effect on operations and characteristics of p-channel FinFET dielectric RRAM

Jen Chieh Kuo, Ya-Chin King and Chrong-Jung Lin
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, pp.1-2
07/2018
DOI: https://doi.org/10.1109/VLSI-TSA.2018.8403830

Abstract

Electrical and Electronic Engineering Instrumentation Electronic Optical and Magnetic Materials
The p-channel based FinFET Dielectric RRAM (FIND RRAM) cell has been proposed for low-cost logic nonvolatile memory (NVM). This p-channel FIND RRAM cell exhibit similar set/reset behaviors as that have been reported on n- channel counterpart, including low set voltage, low reset current and a stable LRS/HRS window. A higher WL voltage can be applied on p-channel WL to facilitate a higher reset speed. In addition, temperature effect on forming, set and reset characteristics are studied in this work.

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