Abstract
The observation of a temperature stabilized PL emission, centered around 1.55 μm in InAs quantum dots grown on InP substrate using InAlGaAs as the matrix layer, was reported. It was observed that decreasing the deposited InAs layer thickness or introduction of a GaAs strain-balance layer leads to a regular redshift in the photoluminescence emission with increasing temperature. A blueshift was observed on samples with a thicker InAs layer thickness. It was found that the strain around quantum dots plays an important role in deciding the temperature-independent properties of the quantum dot samples.