The Effect of Contact-Etch-Stop-Layer and Si1-xGex Channel Mechanical Properties on Nano-Scaled Short Channel NMOSFETs with Dummy Gate Arrays

Conference paper

C. C. Lee, D. Y. Lee, C. P. Hsieh and C. H. Liu

2016 International Electron Devices and Materials Symposium (IEDMS) 2016 International Electron Devices and Materials Symposium (IEDMS)

2016

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Title: The Effect of Contact-Etch-Stop-Layer and Si1-xGex Channel Mechanical Properties on Nano-Scaled Short Channel NMOSFETs with Dummy Gate Arrays
Creators - without role: C. C. Lee - 國立清華大學工學院動力機械工程學系
D. Y. Lee
C. P. Hsieh
C. H. Liu
Identifiers: 9957769921106774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 2016 International Electron Devices and Materials Symposium (IEDMS) 2016 International Electron Devices and Materials Symposium (IEDMS)