The Performance Limiting Factors as RF MOSFETs Scaling Down

Y.H. Wu; A. Chin; C.S. Liang; C.C. Wu

doi:10.1109/RFIC.2000.854437

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The Performance Limiting Factors as RF MOSFETs Scaling Down

Conference paper

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The Performance Limiting Factors as RF MOSFETs Scaling Down

Y.H. Wu, A. Chin, C.S. Liang and C.C. Wu

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp.151-154

2000

DOI: https://doi.org/10.1109/RFIC.2000.854437

Abstract

Radio frequency;MOSFETs;Equations;Performance analysis;Frequency measurement;Analytical models;Probes;Frequency response;Equivalent circuits;Integrated circuit measurements

The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much slower than L/sub g/.

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Title: The Performance Limiting Factors as RF MOSFETs Scaling Down
Creators - without role: Y.H. Wu - National Yang Ming Chiao Tung University
A. Chin - National Yang Ming Chiao Tung University
C.S. Liang - National Yang Ming Chiao Tung University
C.C. Wu - National Yang Ming Chiao Tung University
Identifiers: 0-7803-6280-2; 9957769664106774
Academic Unit: Tsing Hua College, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp.151-154

The Performance Limiting Factors as RF MOSFETs Scaling Down

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