The experimental study of THz image sensor in 0.18 μm CMOS technology

Chih-Wei Lai; Wei-Cheng Chen; Tzu-Chao Yan; Chun-Hsing Li; Chien-Nan Kuo

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Conference paper

The experimental study of THz image sensor in 0.18 μm CMOS technology

Chih-Wei Lai, Wei-Cheng Chen, Tzu-Chao Yan, Chun-Hsing Li and Chien-Nan Kuo

2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014, pp.148-150

03/2014

Abstract

CMOS

Power detector

Responsivity

THz image

Computer Networks and Communications

Hardware and Architecture

Electrical and Electronic Engineering

In this study, four different types of power detectors are implemented in 0.18 μm CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common-gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm.

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Title: The experimental study of THz image sensor in 0.18 μm CMOS technology
Translated title: The experimental study of THz image sensor in 0.18 μm CMOS technology
Creators - without role: Chih-Wei Lai - Department of Electronics Engineering , National Chiao-Tung University
Wei-Cheng Chen - Department of Electronics Engineering , National Chiao-Tung University
Tzu-Chao Yan - Department of Electronics Engineering , National Chiao-Tung University
Chun-Hsing Li - Department of Electrical Engineering , National Central University
Chien-Nan Kuo - Department of Electronics Engineering , National Chiao-Tung University
Publication Details: 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014, pp.148-150
Identifiers: 9784902339314; 9957771251806774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper

The experimental study of THz image sensor in 0.18 μm CMOS technology

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