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The growth of high purity Ga0.47In0.53As on InP by MBE
Conference paper

The growth of high purity Ga0.47In0.53As on InP by MBE

K. Y. Cheng and A. Y. Cho
2nd Int. Symp. on MBE and related Clean Surface Tech., p.103
1982

Abstract

Ga0.47In0.53As;MBE

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