Abstract
This study attempted to investigate the silicon orientation effects on surface blistering behavior under the same implantation condition and thermal budget, Si<100>, Si<111>, and Si<l 10> were employed and implanted with molecular hydrogen ions (H <sub>2</sub> <sup>+</sup> ) with a kinetic energy level 200 keV and molecular ion fluence of 2.5×10 <sup>16</sup> cm <sup>-2</sup> . Following implantation, the variation occurred at specimen's surface under isothermal annealing in an atmosphere ambient were in-situ observed using optical microscopy (OM). Raman scattering spectroscopy (RSS) were adopted to detect radiation damage and secondary ion mass spectroscopy (SIMS) were used to measure the hydrogen trapping depth in the specimens. In our investigation, a post-annealing temperature fell into the regime of T <sub>e</sub> -T <sub>t</sub> for fabricating SOI material with difference silicon orientation is the most optimal under consideration. ©The Electrochemical Society.