Abstract
In this study we investigated the effects of gate stress and body stress on the stability of high voltage AlGaN/GaN HEMTs emphasizing on the variation of threshold voltage under different stress conditions. Devices with a Schottky gate, a recess MIS gate, and a p-GaN gate design were tested. Gate stresses were imposed with different pulse conditions. Body stresses were performed with a constant voltage or a constant current applied at the body electrode. The experiment results show that Schottky gate devices have a smaller threshold voltage variation and hence are more robust under all these stress conditions. © The Electrochemical Society.