Abstract
This study investigated the dependence of surface blistering and exfoliation phenomena on post-annealing time in H-implanted Si〈1 1 1〉. Czochralski-grown n-type Si〈1 1 1〉 wafers were room-temperature ion-implanted with 40 keV hydrogen monomers to a fluence of 5×10 16 cm -2 , and followed by furnace annealing treatments at 400 and 500 °C for various durations ranging from 0.25 to 3 h. The corresponding analysis results for Si〈1 0 0〉 [1] (Liang et al., 2008); [2] (Bai, 2007) were adopted in order to make comparisons. The evolution of blister formation and growth for Si〈1 1 1〉 at 400 °C has a shorter characteristic time compared to Si〈1 0 0〉. However, there is a longer characteristic time when annealing takes place at 500 °C. In addition, no craters were observed for Si〈1 1 1〉 annealed at 400 °C while the opposite is true for Si〈1 0 0〉. The evolution of crater development for Si〈1 1 1〉 annealed at 500 °C has a longer characteristic time compared to Si〈1 0 0〉. These results are attributed to the fact that compared to Si〈1 0 0〉, Si〈1 1 1〉 has a smaller surface binding energy of silicon atoms and a larger areal number density of silicon atoms on the plane perpendicular to the incident-ion axis. Furthermore, Si〈1 1 1〉 has a greater areal number density, smaller diameter, and a similar covered-area fraction of optically-detectable blisters compared to Si〈1 0 0〉. However, Si〈1 1 1〉 has a lower areal number density and a smaller covered-area fraction of craters than does Si〈1 0 0〉. Increasing post-annealing temperature from low (e.g. 400 °C) to high (e.g. 500 °C) revealed that Si〈1 1 1〉 tends to create more blisters while Si〈1 0 0〉 tends to develop larger blisters as well as create more craters. © 2011 Elsevier B.V. All rights reserved.