Abstract
Low loss alternatives plasmonic materials like titanium nitride (TiN), have received significant interests in recent years [1]. TiN has low loss in the visible and NIR wavelengths and the optical properties can be adjusted that TiN is expected to serve as the alternative plasmonic material in visible and near- infrared wavelengths rather than gold and silver [2]. Reactive sputtering deposition is commonly used to deposit nitride films because the composition of the film can be controlled by varying the relative pressures of the inert and reactive gases [3]. In past decades, the development of reactive high power impulse magnetron sputtering (HiPIMS) technology has got lots of attention due to not only better performance of compound deposited films but also more smooth and denser films [4]. In this study, TiN thin films were deposited on B270 glass by HiPIMS with DC- RF co- sputtering system at 400 °C. First, the effects of power density parameter on the conductivity and optical resonant properties of the TiN thin film will be investigated. Then, the relationship between electrical and optical properties will be shown.