Abstract
Transistor characteristics of carbon nanotubes (CNT) field emission triode, grown by thermal chemical vapor deposition (CVD), were discussed. The CNT triode behavior was examined by integrating gate and anode structures with a CNT cathode. The CNT triodes were also tested in a common emitter configuration for dc or dynamic field emission characteristics in 10 -6 torr vacuum. The self-aligned gated CNT triode showed a lower gate turn-on voltage (∼40V) and gate-controlled modulation of the emission current. It was also observed that large cathode gate spacing (120μm) led to high gate turn-on voltage of about 650 V.