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Triplet exciton formation ratio in poly (p-phenylene-vinylene) light-emitting diode
Conference paper   Peer reviewed

Triplet exciton formation ratio in poly (p-phenylene-vinylene) light-emitting diode

L.C. Lin, H.F. Meng, J.T. Shy, S.F. Horng, L.S. Yu, C.H. Chen, H.H. Liaw, C.C. Huang, G.Y. Peng and S.A. Chen
Synthetic Metals, Vol.135-136, pp.425-426
04/04/2003

Abstract

Light-emitting-diode Triplet exciton
The triplet to singlet exciton formation ratio in a poly(2-methoxy- 5(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) light-emitting-diode is measured by comparing the triplet induced-absorptions with optical and electric excitations at same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-statistics value 3 at intermediate field but is reduced to about 1 for higher field. © 2003 Elsevier Science B.V. All rights reserved.

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