Abstract
A high fill-factor self-buffered active pixel sensor and a tunable injection current compensation architecture for high dynamic range imager is proposed for scaled CMOS technology. The new cell, including a photodiode, is formed by n-well and p-type substrate and a single-transistor output buffer can achieve fill-factor of 55%. Dynamic range of up to 120 dB is projected by simulation results. Experimental results for the new structure and simulated design of the circuit are discussed in this work.