Abstract
Conventionally, the master stamp for nanoimprint lithography (NIL) is made of silicon by e-beam lithography when pursuing very high precision, which needs a great amount of time and cost for manufacturing. In addition, diverse applications require variable linewidths and pitches for obtaining demanded performance. This study proposes an efficient method for making working stamps with tunable linewidth using resist trimming technique, oblique metal deposition as well as reactive-ion etching process. The range of the linewidth of patterns was from 55 nm to 37 nm and the patterns were faithfully transferred to the substrates by plasma etching. By the chemical process, working stamps are efficiently manufactured and it can apply numerous categories.