Two-dimensional electron gas at an MBE grown, selectively doped In0.53Ga0.47As interface

Conference paper

A. Kastalsky, R. Dingle, K. Y. Cheng and A. Y. Cho

Proc. 1982 International symposium on GaAs and related compounds (Institute of Physics Conference Series 65), p.181

1982

Abstract

Two-dimensional;MBE;In0.53Ga0.47As

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Title: Two-dimensional electron gas at an MBE grown, selectively doped In0.53Ga0.47As interface
Creators - without role: A. Kastalsky
R. Dingle
K. Y. Cheng
A. Y. Cho
Publication Details: Proc. 1982 International symposium on GaAs and related compounds (Institute of Physics Conference Series 65), p.181
Identifiers: 9957769392506774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper