U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming-Hung Wu; Ming-Chun Hong; Ching Shih; Yao-Jen Chang; Yu-Chen Hsin; Shih-Ching Chiu; Kuan-Ming Chen; Yi-Hui Su; Chih-Yao Wang; Shan-Yi Yang; Guan-Long Chen; Hsin-Han Lee; Sk Ziaur Rahaman; I-Jung Wang; Chen-Yi Shih; Tsun-Chun Chang; Jeng-Hua Wei; Shyh-Shyuan Sheu; Wei-Chung Lo; Shih-Chieh Chang; Tuo-Hung Hou

doi:10.23919/VLSITechnologyandCir57934.2023.10185336

Conference paper

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming-Hung Wu, Ming-Chun Hong, Ching Shih, Yao-Jen Chang, Yu-Chen Hsin, Shih-Ching Chiu, Kuan-Ming Chen, Yi-Hui Su, Chih-Yao Wang, Shan-Yi Yang, …

Digest of Technical Papers - Symposium on VLSI Technology, Vol.2023-June

2023

DOI: https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336

Abstract

Electrical and Electronic Engineering

U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

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Title: U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory
Translated title: U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory
Creators - without role: Ming-Hung Wu - Industrial Technology Research Institute
Ming-Chun Hong - National Yang Ming Chiao Tung University
Ching Shih - National Yang Ming Chiao Tung University
Yao-Jen Chang - Industrial Technology Research Institute , Electronic and Optoelectronic System Research Laboratories
Yu-Chen Hsin - Industrial Technology Research Institute
Shih-Ching Chiu - Industrial Technology Research Institute
Kuan-Ming Chen - Industrial Technology Research Institute
Yi-Hui Su - Industrial Technology Research Institute
Chih-Yao Wang - Industrial Technology Research Institute
Shan-Yi Yang - Industrial Technology Research Institute
Guan-Long Chen - Industrial Technology Research Institute , Electronic and Optoelectronic System Research Laboratories
Hsin-Han Lee - Industrial Technology Research Institute , Electronic and Optoelectronic System Research Laboratories
Sk Ziaur Rahaman - Industrial Technology Research Institute
I-Jung Wang - Industrial Technology Research Institute , Electronic and Optoelectronic System Research Laboratories
Chen-Yi Shih - National Yang Ming Chiao Tung University
Tsun-Chun Chang - Industrial Technology Research Institute
Jeng-Hua Wei - Industrial Technology Research Institute , Electronic and Optoelectronic System Research Laboratories
Shyh-Shyuan Sheu - Industrial Technology Research Institute
Wei-Chung Lo - Industrial Technology Research Institute , Electronic and Optoelectronic System Research Laboratories
Shih-Chieh Chang - Industrial Technology Research Institute
Tuo-Hung Hou - National Yang Ming Chiao Tung University
Publication Details: Digest of Technical Papers - Symposium on VLSI Technology, Vol.2023-June
Identifiers: 9784863488069; 9957773671206774
Academic Unit: Department of Computer Science, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

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