Abstract
For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D <sup>+</sup> -IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO <sub>2</sub> interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO <sub>2</sub> ), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high I <sub>on</sub> /I <sub>off</sub> (>10 <sup>6</sup> ) that enable ultra-low power operation ( V DD=100 mV) of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.