Abstract
In this paper, we present an ultra high density 3D Via RRAM with 28nm HKMG CMOS fully compatible process. It is the first time to report a cross-point 3D RRAM formed by the stacked 30nm × 30nm Cu Via and Cu metal line of 28nm HKMG CMOS Cu single damascene process. The 3D Via RRAM cell consists of a TaON-based resistive film, Cu Via as top electrode, and Cu metal as bottom electrode. The TaON-based RRAM film is a composite layer of backend metal glue layer of Ta and TaN in 28nm Cu damascene process. Moreover, in the compact 3D Via RRAM structure, the unit area of a single stacked cell-string is reduced to only 4 times of Via size by 28nm CMOS design rules. Since the cross-point 3D Via RRAM is fabricated without extra TMO film or process step, this excellent cell scalability and compatibility can provide a competitive low cost and high density embedded NVM solution in advanced CMOS logic nodes. © 2013 IEEE.