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Ultra-high sensitivity for lead ion detection beyond the ideal nernst response with AlGaN/GaN high electron mobility transistors (HEMTs)
Conference paper

Ultra-high sensitivity for lead ion detection beyond the ideal nernst response with AlGaN/GaN high electron mobility transistors (HEMTs)

Ching-Yen Hsieh, Yi-Ting Chen, Revathi Sukesan and Yu-Lin Wang
ECS Transactions, Vol.85(9), pp.3-8
2018

Abstract

Engineering (all)
In this research, we combined AlGaN/GaN HEMT and ISM to accomplish a small, ultra-high, short response time, easy to fabricate and convenient lead ion sensor. We got the dynamic range from 10 10 M to 10" 5 M covering the highest tolerable concentration of water regulation. The result is very comparable to ICP-MS which detection limit is between 10" 10 M to 10"" M. The most important is our device has much higher sensitivity beyond Nemst response. The effect of Cu 2 * and Hg 2 + to lead ISM is not too obvious. This sensor would be a great help to detecting the lead ions in water. Finally, this convenience, fast, ability to be batched device is very competitive to be commercialize in the market.

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