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Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f T = 500 GHz grown by gas-source molecular beam epitaxy
Conference paper

Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f T = 500 GHz grown by gas-source molecular beam epitaxy

Bing-Ruey Wu, William Snodgrass, Walid Hafez, Milton Feng and KEH-YUNG CHENG
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Vol.2006, pp.89-91
2006

Abstract

Heterojunction bipolar transistors (HBTs) Molecular beam epitaxy (MBE)
Graded InGaAsSb:C base double heterojunction bipolar transistors (DHBT) were grown on InP to enhance the electron transit time through the base region. A record high unity current gain frequency f T of 500 GHz is achieved in the DHBT with a 250Å thick InGaAsSb:C linear graded base. © 2006 IEEE.

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