Ultraf ast Carrier Relaxation in Semi-insulating GaAs Implanted with Arsenic Ions IGaAs:As)

Conference paper

Gong-Ru Lin, Feruz Ganikhanov, Wen-Chung Chen, C.-S. Chang and Ci-Ling Pan

Optics InfoBase Conference Papers, pp.141-143

1995

Abstract

Electronic

Optical and Magnetic Materials

Mechanics of Materials

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Title: Ultraf ast Carrier Relaxation in Semi-insulating GaAs Implanted with Arsenic Ions IGaAs:As)
Translated title: Ultraf ast Carrier Relaxation in Semi-insulating GaAs Implanted with Arsenic Ions IGaAs:As)
Creators - without role: Gong-Ru Lin - Institute of Electro-Optical Engineering , National Chiao Tung University
Feruz Ganikhanov - Institute of Electro-Optical Engineering , National Chiao Tung University
Wen-Chung Chen - Institute of Electro-Optical Engineering , National Chiao Tung University
C.-S. Chang - Institute of Electro-Optical Engineering , National Chiao Tung University
Ci-Ling Pan - Institute of Electro-Optical Engineering , National Chiao Tung University
Identifiers: 1557523983; 9957768619606774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Optics InfoBase Conference Papers, pp.141-143