Ultrahigh responsivity and tunable photogain BEOL compatible MoS}_{2} phototransistor array for monolithic 3D image sensor with block-level sensing circuits

Chih-Chao Yang; Ping-Yi Hsieh; Po-Han Chen; Tung-Ying Hsieh; Po-Tsang Huang; Yu-Ting Lin; Jia-Min Shieh; Da-Chiang Chang; Wen-Kuan Yeh; Meng-Chyi Wu; Yi-Hsien Lee

doi:10.1109/VLSITechnology18217.2020.9265017

$Ultrahigh responsivity and tunable photogain BEOL compatible MoS}_{2} phototransistor array for monolithic 3D image sensor with block-level sensing circuits$

Conference paper

Ultrahigh responsivity and tunable photogain BEOL compatible MoS}_{2} phototransistor array for monolithic 3D image sensor with block-level sensing circuits

Chih-Chao Yang, Ping-Yi Hsieh, Po-Han Chen, Tung-Ying Hsieh, Po-Tsang Huang, Yu-Ting Lin, Jia-Min Shieh, Da-Chiang Chang, Wen-Kuan Yeh, Meng-Chyi Wu, …

Digest of Technical Papers - Symposium on VLSI Technology, Vol.2020-June, 9265017

06/2020

DOI: https://doi.org/10.1109/VLSITechnology18217.2020.9265017

Abstract

image sensor

monolithic 3D

phototransistor

TMD

ultrahigh resposivity

Electrical and Electronic Engineering

A large-area and scalable monolayer TMD is feasible to employ in monolithic 3D image sensor scheme. For the first time, we represents a prototype MoS2 phototransistor array with ultrahigh responsivity (> 102 AW}) and tunable photogain (102 105) which can be directly implemented on a CMOS circuit connected with BEOL fine-pitch vertical interconnects. Electric gate pulse modulation mitigates photo gating (PG) and persistent photoconductance (PPC) effects from layered semiconductor interface. Both three-order-of-magnitude improvements of response speed and fine-pitch vertical interconnects empower block-level compressive sensing circuits and global image-signal processing for gain control and data compression.

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Title: Ultrahigh responsivity and tunable photogain BEOL compatible MoS}_{2} phototransistor array for monolithic 3D image sensor with block-level sensing circuits
Translated title: Ultrahigh responsivity and tunable photogain BEOL compatible MoS}_{2} phototransistor array for monolithic 3D image sensor with block-level sensing circuits
Creators - without role: Chih-Chao Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)
Ping-Yi Hsieh - Taiwan Semiconductor Manufacturing Company (Taiwan)
Po-Han Chen - National Tsing Hua University , Department of Materials Science and Engineering
Tung-Ying Hsieh - National Institutes of Applied Research
Po-Tsang Huang - National Yang Ming Chiao Tung University
Yu-Ting Lin - National Tsing Hua University , Department of Materials Science and Engineering
Jia-Min Shieh - Taiwan Semiconductor Manufacturing Company (China)
Da-Chiang Chang - Taiwan Semiconductor Research Institute
Wen-Kuan Yeh - Taiwan Semiconductor Manufacturing Company (Taiwan)
Meng-Chyi Wu - National Tsing Hua University , Department of Materials Science and Engineering
Yi-Hsien Lee - National Tsing Hua University , Department of Materials Science and Engineering
Identifiers: 9781728164601; 9957773034306774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University; Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Digest of Technical Papers - Symposium on VLSI Technology, Vol.2020-June, 9265017

Ultrahigh responsivity and tunable photogain BEOL compatible MoS}_{2} phototransistor array for monolithic 3D image sensor with block-level sensing circuits

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