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Ultralow EOT, Excellent Uniformity and High Mobility Ge pMOSFETs by in-situ H2O Plasma Grown GeO2 and HfON Gate Dielectric
Conference paper

Ultralow EOT, Excellent Uniformity and High Mobility Ge pMOSFETs by in-situ H2O Plasma Grown GeO2 and HfON Gate Dielectric

Li-Jung Liu, Kuei-Shu Chang-Liao, Chung-Hao Fu, Ting-Ching Chen, Jen-Wei Cheng, Chen-Chien Li, Chun-Chang Lu and Tien-Ko Wang
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
2013
DOI: https://doi.org/10.1109/VLSI-TSA.2013.6545614

Abstract

Plasmas;Hafnium compounds;Water;MOSFET;Chemicals;Oxidation
The TaN/HfON/GeO2/n-Ge pMOSFETs were fabricated with different formation processes of GeO2 interfacial layer. Ultra low EOT of around 0.5 nm is achieved using GeO2 grown by H2O plasma together with in-situ grown HfON gate dielectric, and simultaneously the peak hole mobility of Ge pMOSFET is 312 cm2/V*s.

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