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Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric
Conference paper

Ultralow EOT and high mobility Ge pMOSFETs with in-situ H2O plasma grown GeO2 and HfON gate dielectric

Li-Jung Liu, Kuei-Shu Chang-Liao, Chung-Hao Fu, Ting-Ching Chen, Jen-Wei Cheng, Chen-Chien Li, Chun-Chang Lu and Tien-Ko Wang
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 6545614
2013
DOI: https://doi.org/10.1109/VLSI-TSA.2013.6545614

Abstract

The TaN/HfON/GeO 2 /n-Ge pMOSFETs were fabricated with different formation processes of GeO 2 interfacial layer. Ultra low EOT of around 0.5 nm is achieved using GeO 2 grown by H 2 O plasma together with in-situ grown HfON gate dielectric, and simultaneously the peak hole mobility of Ge pMOSFET is 312 cm 2 /V*s. © 2013 IEEE.

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