Ultralow Low EOT and High Oxidation State Interfacial Layer in Ge MOS Devices

Conference paper

Kuei-Shu Chang-Liao, Chen-Chien Li and Tzu-Min Lee

Symposium IX: Emerging Semiconductor Technologies Symposium IX: Emerging Semiconductor Technologies

2015

Abstract

Ultralow Low EOT;High Oxidation State;Interfacial Layer;Ge MOS Devices

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Title: Ultralow Low EOT and High Oxidation State Interfacial Layer in Ge MOS Devices
Creators - without role: Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Chen-Chien Li
Tzu-Min Lee
Identifiers: 9957775553206774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: Symposium IX: Emerging Semiconductor Technologies Symposium IX: Emerging Semiconductor Technologies