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Ultrathin (∼10nm) InN resistive gas sensor for selectivity of breath ammonia gas by using temperature modulation
Conference paper

Ultrathin (∼10nm) InN resistive gas sensor for selectivity of breath ammonia gas by using temperature modulation

Sujeet Kumar Rai, K.W. Kao, S.J. Gow and J. Andrew Yeh
2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, pp.532-535
11/2016

Abstract

Epitaxial Growth Indium Nitride Liver Disease PAMBE Selectivity temperature modulation Industrial and Manufacturing Engineering Mechanical Engineering Mechanics of Materials Electronic Optical and Magnetic Materials
The advancement of epitaxial growth techniques of ultrathin InN crystalline has opened new opportunities to develop miniaturized selective gas sensors for the breath ammonia gas. The high quality (∼ 10 nm) ultrathin InN coated with Pt catalytic layer have been fabricated for selective detection of breath ammonia gas by using temperature modulation technique for liver disease application. Temperature modulation technique is very effective method to enhance selectivity of gas sensor. We are using staircase temperature programming from (200 °C to 0 °C to 200 °C) and from (175 °C to 210 °C to 175 °C) for a single InN gas sensor can achieve the selectivity of ammonia gas, each temperature region act as virtual sensor, InN gas sensor will give different response in different temperature region. Percentage change in current in each temperature region is key factor to improve the selectivity of ammonia gas.

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