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Ultrathin nitride layers grown by MBE and their effects on interface states in Si MISFET
Conference paper

Ultrathin nitride layers grown by MBE and their effects on interface states in Si MISFET

R. T. Fayfield, J. Chen, M. S. Hagedorn, T. K. Higman, A. M. Moy and K. Y. Cheng
14th North American Conference on Molecular Beam Epitaxy
1994

Abstract

Ultrathin nitride layers;MBE;interface states;Si MISFET

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