Abstract
In this study, a novel UV light gating 2D MoS field-effect transistor (FET) using dielectrophoretic (DEP) assembly process for pH sensing is proposed and demonstrated. We have reported that the 1D TiO nanowire-based gas sensor assembled by DEP assembly for detection of vapor pollutants, such as NH3, at room temperature at the μTAS 2012 conference [1]. In this abstract, we move to 2D MoS materials, which exhibit higher sensitivity and signal-to-noise ratio than 1D nanomaterials [2], and apply DEP to precisely assemble MoS microflakes between microelectrodes as FET devices. The developed MoS FET sensor have been characterized for optoelectronics and applied for pH sensing.